Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

R. Oulton; J. J. Finley; A. D. Ashmore; I. S. Gregory; D. J. Mowbray; M. S. Skolnick; M. J. Steer; San Lin Liew; M. A. Migliorato; A. J. Cullis

doi:10.1103/PhysRevB.66.045313

Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

R. Oulton, J. J. Finley, A. D. Ashmore, I. S. Gregory, D. J. Mowbray, M. S. Skolnick, M. J. Steer, San Lin Liew, M. A. Migliorato, A. J. Cullis

University of Sheffield

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

Original language	English
Article number	045313
Pages (from-to)	453131-453134
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.66.045313
State	Published - 15 Jul 2002
Externally published	Yes

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Oulton, R., Finley, J. J., Ashmore, A. D., Gregory, I. S., Mowbray, D. J., Skolnick, M. S., Steer, M. J., Liew, S. L., Migliorato, M. A., & Cullis, A. J. (2002). Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot. Physical Review B - Condensed Matter and Materials Physics, 66(4), 453131-453134. Article 045313. https://doi.org/10.1103/PhysRevB.66.045313

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abstract = "By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.",

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AU - Oulton, R.

AU - Finley, J. J.

AU - Ashmore, A. D.

AU - Gregory, I. S.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Steer, M. J.

AU - Liew, San Lin

AU - Migliorato, M. A.

AU - Cullis, A. J.

PY - 2002/7/15

Y1 - 2002/7/15

N2 - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

AB - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

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ER -

Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

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