Manipulating a domain wall in (Ga,Mn)As

A. W. Holleitner; H. Knotz; R. C. Myers; A. C. Gossard; D. D. Awschalom

doi:10.1063/1.1849055

Manipulating a domain wall in (Ga,Mn)As

A. W. Holleitner, H. Knotz, R. C. Myers, A. C. Gossard, D. D. Awschalom

University of California, Santa Barbara

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature.

Original language	English
Article number	10D314
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1849055
State	Published - 15 May 2005
Externally published	Yes

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abstract = "By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature.",

author = "Holleitner, {A. W.} and H. Knotz and Myers, {R. C.} and Gossard, {A. C.} and Awschalom, {D. D.}",

note = "Funding Information: The authors acknowledge financial support by AFOSR and ONR. The authors further thank R. J. Epstein and F. Meier for enlightening discussions.",

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AU - Knotz, H.

AU - Myers, R. C.

AU - Gossard, A. C.

AU - Awschalom, D. D.

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N2 - By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature.

AB - By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature.

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Manipulating a domain wall in (Ga,Mn)As

Abstract

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