Manipulating a domain wall in (Ga,Mn)As

A. W. Holleitner, H. Knotz, R. C. Myers, A. C. Gossard, D. D. Awschalom

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature.

Original languageEnglish
Article number10D314
JournalJournal of Applied Physics
Issue number10
StatePublished - 15 May 2005
Externally publishedYes


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