Abstract
This paper reports on characterization and numerical modelling of dual-collector magnetotransistors with suppressed sidewall injection (SSIMT) fabricated in silicon on insulator (SOI) technology. This process allows to eliminate, by design, the undesirable high substrate current usually present in conventional bipolar or CMOS fabricated SSIMT's. Two-dimensional simulations reveal that the device operates like a PIN diode rather than as a true transistor, as expected. The presence of an electron-hole plasma in the active device region inhibits a proper transistor behavior. The magnetic performance of the SSIMT is improved by reducing the minority carrier lifetime and by redefining the doping profiles of the process.
| Original language | English |
|---|---|
| Pages (from-to) | 147-150 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994 |