TY - JOUR
T1 - Magnetoresistance of semiconductor-metal hybrid structures
T2 - The effects of material parameters and contact resistance
AU - Holz, Matthias
AU - Kronenwerth, Oliver
AU - Grundler, Dirk
PY - 2003/5/9
Y1 - 2003/5/9
N2 - We have used the finite element method to study the extraordinary magnetoresistance (EMR) effect of semiconductor-metal hybrid structures in rectangular device geometries. These have recently been found to exhibit intriguing properties interesting for magnetic-field sensors. Current and potential distributions in the devices are calculated in an applied magnetic field. By these means, we investigate the EMR effect, in particular, as a function of material parameters and of the contact resistance ρc between the semiconductor and the metal. In our calculations we find that ρc should be within a specific operation regime in order to obtain a pronounced magnetoresistance effect. We show that by means of the electron mobility in the semiconductor the voltage and the current sensitivity of a hybrid device can be optimized with respect to an operation field in the 10-mT range.
AB - We have used the finite element method to study the extraordinary magnetoresistance (EMR) effect of semiconductor-metal hybrid structures in rectangular device geometries. These have recently been found to exhibit intriguing properties interesting for magnetic-field sensors. Current and potential distributions in the devices are calculated in an applied magnetic field. By these means, we investigate the EMR effect, in particular, as a function of material parameters and of the contact resistance ρc between the semiconductor and the metal. In our calculations we find that ρc should be within a specific operation regime in order to obtain a pronounced magnetoresistance effect. We show that by means of the electron mobility in the semiconductor the voltage and the current sensitivity of a hybrid device can be optimized with respect to an operation field in the 10-mT range.
UR - http://www.scopus.com/inward/record.url?scp=0037965128&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.67.195312
DO - 10.1103/PhysRevB.67.195312
M3 - Article
AN - SCOPUS:0037965128
SN - 1098-0121
VL - 67
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 19
ER -