TY - JOUR
T1 - Magneto-optical studies of GaAs/AlGaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth
AU - Sorba, L.
AU - Schedelbeck, G.
AU - Wegscheider, W.
AU - Bichler, M.
AU - Böhm, G.
AU - Abstreiter, G.
PY - 1999/5
Y1 - 1999/5
N2 - The optical properties of T-shaped GaAs/AlGaAs quantum wire (QWR) waveguide structures are studied with a magnetic field oriented parallel or perpendicular to the QWR axis. The QWRs were fabricated by the cleaved edge overgrowth (CEO) technique. At low values of the magnetic field oriented perpendicular to the QWR axis, a strong increase in the light emission intensity is observed for all injection currents. For the magnetic field direction parallel to the QWR axis a completely different behavior is found. For magnetic fields greater than 4 T a decrease in the intensity of the emitted light for injection currents below 0.125 mA is observed, while an increase is measured for injection currents larger than 0.125 mA. The origin of the effects induced by the magnetic field is interpreted in terms of optical properties of a one-dimensional (1D) system.
AB - The optical properties of T-shaped GaAs/AlGaAs quantum wire (QWR) waveguide structures are studied with a magnetic field oriented parallel or perpendicular to the QWR axis. The QWRs were fabricated by the cleaved edge overgrowth (CEO) technique. At low values of the magnetic field oriented perpendicular to the QWR axis, a strong increase in the light emission intensity is observed for all injection currents. For the magnetic field direction parallel to the QWR axis a completely different behavior is found. For magnetic fields greater than 4 T a decrease in the intensity of the emitted light for injection currents below 0.125 mA is observed, while an increase is measured for injection currents larger than 0.125 mA. The origin of the effects induced by the magnetic field is interpreted in terms of optical properties of a one-dimensional (1D) system.
UR - http://www.scopus.com/inward/record.url?scp=0032656285&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01480-8
DO - 10.1016/S0022-0248(98)01480-8
M3 - Conference article
AN - SCOPUS:0032656285
SN - 0022-0248
VL - 201
SP - 805
EP - 809
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -