Magneto-optical studies of ballistic electron transport in single barrier heterostructures

R. Teissier; J. W. Cockburn; J. J. Finley; M. S. Skolnick; P. D. Buckle; D. J. Mowbray; R. Grey; G. Hill; M. A. Pate

doi:10.1006/spmi.1994.1072

Magneto-optical studies of ballistic electron transport in single barrier heterostructures

R. Teissier, J. W. Cockburn, J. J. Finley, M. S. Skolnick, P. D. Buckle, D. J. Mowbray, R. Grey, G. Hill, M. A. Pate

Research output: Contribution to journal › Article › peer-review

Abstract

We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.

Original language	English
Pages (from-to)	373-376
Number of pages	4
Journal	Superlattices and Microstructures
Volume	15
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1994.1072
State	Published - 1994
Externally published	Yes

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title = "Magneto-optical studies of ballistic electron transport in single barrier heterostructures",

abstract = "We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.",

author = "R. Teissier and Cockburn, {J. W.} and Finley, {J. J.} and Skolnick, {M. S.} and Buckle, {P. D.} and Mowbray, {D. J.} and R. Grey and G. Hill and Pate, {M. A.}",

year = "1994",

doi = "10.1006/spmi.1994.1072",

language = "English",

volume = "15",

pages = "373--376",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

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TY - JOUR

T1 - Magneto-optical studies of ballistic electron transport in single barrier heterostructures

AU - Teissier, R.

AU - Cockburn, J. W.

AU - Finley, J. J.

AU - Skolnick, M. S.

AU - Buckle, P. D.

AU - Mowbray, D. J.

AU - Grey, R.

AU - Hill, G.

AU - Pate, M. A.

PY - 1994

Y1 - 1994

N2 - We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.

AB - We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.

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U2 - 10.1006/spmi.1994.1072

DO - 10.1006/spmi.1994.1072

M3 - Article

AN - SCOPUS:0028729176

SN - 0749-6036

VL - 15

SP - 373

EP - 376

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Magneto-optical studies of ballistic electron transport in single barrier heterostructures

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