TY - JOUR
T1 - Magnetic field robust high quality factor NbTiN superconducting microwave resonators
AU - Müller, M.
AU - Luschmann, T.
AU - Faltermeier, A.
AU - Weichselbaumer, S.
AU - Koch, L.
AU - Huber, G. B.P.
AU - Schumacher, H. W.
AU - Ubbelohde, N.
AU - Reifert, D.
AU - Scheller, T.
AU - Deppe, F.
AU - Marx, A.
AU - Filipp, S.
AU - Althammer, M.
AU - Gross, R.
AU - Huebl, H.
N1 - Publisher Copyright:
© 2022 The Author(s). Published by IOP Publishing Ltd.
PY - 2022/3/1
Y1 - 2022/3/1
N2 - We systematically study the performance of compact lumped element planar microwave Nb70Ti30N (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at T = 2.2 K, we find internal quality factors Qint ≃ 2 × 105 for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the Q-factors of the resonators on pristine Si substrates at millikelvin temperatures to assess their applicability for quantum applications. We find Qint ≃ 2 × 105 in the single photon regime and Qint ≃ 5 × 105 in the high power regime at T = 7 mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the surface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.
AB - We systematically study the performance of compact lumped element planar microwave Nb70Ti30N (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at T = 2.2 K, we find internal quality factors Qint ≃ 2 × 105 for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the Q-factors of the resonators on pristine Si substrates at millikelvin temperatures to assess their applicability for quantum applications. We find Qint ≃ 2 × 105 in the single photon regime and Qint ≃ 5 × 105 in the high power regime at T = 7 mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the surface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.
KW - dc-sputter deposition of niobium titanium nitride
KW - electron spin resonance
KW - microwave resonators for circuit QED
KW - niobium titanium nitride thin films
KW - performance of microwave resonators at millikelvin temperatures
KW - superconducting planar microwave resonators
UR - http://www.scopus.com/inward/record.url?scp=85148748296&partnerID=8YFLogxK
U2 - 10.1088/2633-4356/ac50f8
DO - 10.1088/2633-4356/ac50f8
M3 - Article
AN - SCOPUS:85148748296
SN - 2633-4356
VL - 2
JO - Materials for Quantum Technology
JF - Materials for Quantum Technology
IS - 1
M1 - 015002
ER -