LUMINESCENCE AND INELASTIC LIGHT SCATTERING IN GaAs DOPING SUPERLATTICES.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Periodic doping multilayer structures of GaAs exhibit new and exciting semiconductor properties like tunable effective band gap, long lifetime of photoexcited carriers, and formation of electric subbands due to space charge induced potential wells. Photo- and electroluminescence experiments demonstrate the wide tunability of the effective gap. Resonant inelastic light scattering is used to obtain subband splittings and Coulomb screening effects. The resonance behavior leads to information on the scattering processes. Contributions of different subband transitions can be extracted from the dependence of the excitations on laser energy.

Original languageEnglish
Title of host publicationSpringer Series in Solid-State Sciences
PublisherSpringer Verlag
Pages232-239
Number of pages8
ISBN (Print)3540135847, 9783540135845
DOIs
StatePublished - 1984

Publication series

NameSpringer Series in Solid-State Sciences
ISSN (Print)0171-1873

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