Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range

Kaveh Kashani-Shirazi; Kristijonas Vizbaras; Alexander Bachmann; Shamsul Arafin; Markus Christian Amann

doi:10.1109/LPT.2009.2023077

Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range

Kaveh Kashani-Shirazi
, Kristijonas Vizbaras
, Alexander Bachmann
, Shamsul Arafin
, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm² (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm^-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.

Original language	English
Pages (from-to)	1106-1108
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2009.2023077
State	Published - 15 Aug 2009

Keywords

Optical spectroscopy
Quantum-well (QW) lasers

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10.1109/LPT.2009.2023077

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title = "Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range",

abstract = "GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.",

keywords = "Optical spectroscopy, Quantum-well (QW) lasers",

author = "Kaveh Kashani-Shirazi and Kristijonas Vizbaras and Alexander Bachmann and Shamsul Arafin and Amann, \{Markus Christian\}",

year = "2009",

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doi = "10.1109/LPT.2009.2023077",

language = "English",

volume = "21",

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T1 - Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range

AU - Kashani-Shirazi, Kaveh

AU - Vizbaras, Kristijonas

AU - Bachmann, Alexander

AU - Arafin, Shamsul

AU - Amann, Markus Christian

PY - 2009/8/15

Y1 - 2009/8/15

N2 - GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.

AB - GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.

KW - Optical spectroscopy

KW - Quantum-well (QW) lasers

UR - https://www.scopus.com/pages/publications/68449094951

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DO - 10.1109/LPT.2009.2023077

M3 - Article

AN - SCOPUS:68449094951

SN - 1041-1135

VL - 21

SP - 1106

EP - 1108

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range

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Keywords

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