TY - JOUR
T1 - Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range
AU - Kashani-Shirazi, Kaveh
AU - Vizbaras, Kristijonas
AU - Bachmann, Alexander
AU - Arafin, Shamsul
AU - Amann, Markus Christian
PY - 2009/8/15
Y1 - 2009/8/15
N2 - GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.
AB - GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 μm have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm2 (L → ∞) for a single QW device at 2.51 μm, which is the lowest reported value in continuous-wave operation near room temperature (15 °C) at this wavelength. The devices have an internal loss of 3 cm-1 and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 μm could be achieved.
KW - Optical spectroscopy
KW - Quantum-well (QW) lasers
UR - http://www.scopus.com/inward/record.url?scp=68449094951&partnerID=8YFLogxK
U2 - 10.1109/LPT.2009.2023077
DO - 10.1109/LPT.2009.2023077
M3 - Article
AN - SCOPUS:68449094951
SN - 1041-1135
VL - 21
SP - 1106
EP - 1108
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 16
ER -