Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths

C. Doganlar, P. Schmiedeke, H. W. Jeong, M. Döblinger, J. J. Finley, G. Koblmüller

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate lasing from single ternary GaAsSb nanowire (NW) lasers with low threshold under optical pumping at silicon transparent wavelengths (~1.1-1.2 µm). These breakthroughs are enabled by combining high-quality, phase-pure GaAsSb NWs with extended cavity lengths and effective surface passivation using lattice-matched InAlGaAs layers. Lasing at thresholds of ~ 3 µJ/cm2 and up to 250 K is verified.

Original languageEnglish
Title of host publication2024 Conference on Lasers and Electro-Optics, CLEO 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781957171395
DOIs
StatePublished - 2024
Event2024 Conference on Lasers and Electro-Optics, CLEO 2024 - Charlotte, United States
Duration: 7 May 202410 May 2024

Publication series

Name2024 Conference on Lasers and Electro-Optics, CLEO 2024

Conference

Conference2024 Conference on Lasers and Electro-Optics, CLEO 2024
Country/TerritoryUnited States
CityCharlotte
Period7/05/2410/05/24

Keywords

  • Electro-optic effects
  • Optical pumping
  • Optical surface waves
  • Passivation
  • Pump lasers
  • Silicon
  • Surface emitting lasers
  • Surface waves

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