Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths

  • C. Doganlar
  • , P. Schmiedeke
  • , H. W. Jeong
  • , M. Döblinger
  • , J. J. Finley
  • , G. Koblmüller

Research output: Contribution to conferencePaperpeer-review

Abstract

We demonstrate lasing from single ternary GaAsSb nanowire (NW) lasers with low threshold under optical pumping at silicon transparent wavelengths (~1.1-1.2 µm). These breakthroughs are enabled by combining high-quality, phase-pure GaAsSb NWs with extended cavity lengths and effective surface passivation using lattice-matched InAlGaAs layers. Lasing at thresholds of ~ 3 µJ/cm2 and up to 250 K is verified.

Original languageEnglish
StatePublished - 2024
EventCLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics - Charlotte, United States
Duration: 5 May 202410 May 2024

Conference

ConferenceCLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics
Country/TerritoryUnited States
CityCharlotte
Period5/05/2410/05/24

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