Abstract
We demonstrate lasing from single ternary GaAsSb nanowire (NW) lasers with low threshold under optical pumping at silicon transparent wavelengths (~1.1-1.2 µm). These breakthroughs are enabled by combining high-quality, phase-pure GaAsSb NWs with extended cavity lengths and effective surface passivation using lattice-matched InAlGaAs layers. Lasing at thresholds of ~ 3 µJ/cm2 and up to 250 K is verified.
| Original language | English |
|---|---|
| State | Published - 2024 |
| Event | CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics - Charlotte, United States Duration: 5 May 2024 → 10 May 2024 |
Conference
| Conference | CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics |
|---|---|
| Country/Territory | United States |
| City | Charlotte |
| Period | 5/05/24 → 10/05/24 |
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