Abstract
Conventional binary III-V nanowire (NW) lasers face substantial challenges in tuning their lasing emission to silicon transparent wavelengths and require complex quantum heterostructure designs for realizing on-chip integrated nanolasers. Here, an alternative and straightforward approach is reported by developing ternary III-V NW-lasers in the form of surface-passivated GaAsSb NW-lasers grown on silicon. High-quality GaAsSb NW-cavities with high Sb-content (>20%) and extended lengths (>5 μm) are shown to exhibit striking radiative efficiency enhancements (∼200-fold) when passivated by closely lattice-matched InAlGaAs shell layers. Utilizing this core-shell approach, optically pumped lasing is then demonstrated from single GaAsSb NW-lasers with lasing threshold as low as 3.2 μJ/cm2 at temperatures up to 250 K and emission wavelengths of ∼1.1-1.2 μm. Analysis of the optical mode spectra and mode-dependent threshold gain further shows that lasing is induced by the fundamental HE11 modes, and likely even lower thresholds may be achieved by establishing the TE01 mode at increased NW-cavity diameters.
Original language | English |
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Article number | 071112 |
Journal | Applied Physics Letters |
Volume | 124 |
Issue number | 7 |
DOIs | |
State | Published - 12 Feb 2024 |