Low-threshold room-temperature operation of injectorless quantum-cascade lasers: Influence of doping density

A. Friedrich; C. Huber; G. Boehm; M. C. Amann

doi:10.1049/el:20062702

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: Influence of doping density

A. Friedrich, C. Huber, G. Boehm, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The influence of the doping density in the active sections of InP-based injectorless quantum cascade lasers, emitting at 6.8m, is investigated. The doping sheet density is varied in the range 2.5-8.6×10¹⁰cm ^-2. Lasing is observed in the whole range, with a threshold current density as low as 1.2kA/cm² at 300K for the smallest doping sheet density of 2.5×10¹⁰cm^-2. Further improvement has been made by additionally increasing the number of periods in the active region from 40 to 60. With the same doping level of 2.5×10¹⁰cm ^-2 record low threshold current densities of 0.73kA/cm² at 300K were achieved.

Original language	English
Pages (from-to)	1228-1229
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	21
DOIs	https://doi.org/10.1049/el:20062702
State	Published - 2006

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title = "Low-threshold room-temperature operation of injectorless quantum-cascade lasers: Influence of doping density",

abstract = "The influence of the doping density in the active sections of InP-based injectorless quantum cascade lasers, emitting at 6.8m, is investigated. The doping sheet density is varied in the range 2.5-8.6×1010cm -2. Lasing is observed in the whole range, with a threshold current density as low as 1.2kA/cm2 at 300K for the smallest doping sheet density of 2.5×1010cm-2. Further improvement has been made by additionally increasing the number of periods in the active region from 40 to 60. With the same doping level of 2.5×1010cm -2 record low threshold current densities of 0.73kA/cm2 at 300K were achieved.",

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T1 - Low-threshold room-temperature operation of injectorless quantum-cascade lasers

T2 - Influence of doping density

AU - Friedrich, A.

AU - Huber, C.

AU - Boehm, G.

AU - Amann, M. C.

PY - 2006

Y1 - 2006

N2 - The influence of the doping density in the active sections of InP-based injectorless quantum cascade lasers, emitting at 6.8m, is investigated. The doping sheet density is varied in the range 2.5-8.6×1010cm -2. Lasing is observed in the whole range, with a threshold current density as low as 1.2kA/cm2 at 300K for the smallest doping sheet density of 2.5×1010cm-2. Further improvement has been made by additionally increasing the number of periods in the active region from 40 to 60. With the same doping level of 2.5×1010cm -2 record low threshold current densities of 0.73kA/cm2 at 300K were achieved.

AB - The influence of the doping density in the active sections of InP-based injectorless quantum cascade lasers, emitting at 6.8m, is investigated. The doping sheet density is varied in the range 2.5-8.6×1010cm -2. Lasing is observed in the whole range, with a threshold current density as low as 1.2kA/cm2 at 300K for the smallest doping sheet density of 2.5×1010cm-2. Further improvement has been made by additionally increasing the number of periods in the active region from 40 to 60. With the same doping level of 2.5×1010cm -2 record low threshold current densities of 0.73kA/cm2 at 300K were achieved.

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SP - 1228

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JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: Influence of doping density

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