Abstract
A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57kA/cm2 at 300K and a maximum operation temperature of 360K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.
| Original language | English |
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| Pages (from-to) | 580-581 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 44 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2008 |