Low-threshold injectorless quantum cascade laser with four material compositions

S. Katz; G. Boehm; M. C. Amann

doi:10.1049/el:20080613

Low-threshold injectorless quantum cascade laser with four material compositions

S. Katz, G. Boehm, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57kA/cm² at 300K and a maximum operation temperature of 360K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T₀ and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.

Original language	English
Pages (from-to)	580-581
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	9
DOIs	https://doi.org/10.1049/el:20080613
State	Published - 2008

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abstract = "A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57kA/cm2 at 300K and a maximum operation temperature of 360K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.",

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AB - A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57kA/cm2 at 300K and a maximum operation temperature of 360K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.

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Low-threshold injectorless quantum cascade laser with four material compositions

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