Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range

R. Shau; M. Ortsiefer; M. Zigldrum; J. Rosskopf; G. Böhm; F. Köhler; M. C. Amann

doi:10.1049/el:20000934

Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range

R. Shau, M. Ortsiefer, M. Zigldrum, J. Rosskopf, G. Böhm, F. Köhler, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The buried tunnel junction (BTJ) method has been successfully used to realize the electrically pumped 1.83 μm vertical cavity surface emitting lasers. Excellent continuous wave performance with sub-milliamp threshold currents, differential quantum efficiencies up to 26% and singlemode operation has been achieved.

Original language	English
Pages (from-to)	1286-1287
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	15
DOIs	https://doi.org/10.1049/el:20000934
State	Published - 20 Jul 2000

Access to Document

10.1049/el:20000934

Cite this

@article{3d20ef1661c3403894865cbcd9dd667b,

title = "Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range",

abstract = "The buried tunnel junction (BTJ) method has been successfully used to realize the electrically pumped 1.83 μm vertical cavity surface emitting lasers. Excellent continuous wave performance with sub-milliamp threshold currents, differential quantum efficiencies up to 26\% and singlemode operation has been achieved.",

author = "R. Shau and M. Ortsiefer and M. Zigldrum and J. Rosskopf and G. B{\"o}hm and F. K{\"o}hler and Amann, \{M. C.\}",

year = "2000",

month = jul,

day = "20",

doi = "10.1049/el:20000934",

language = "English",

volume = "36",

pages = "1286--1287",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "15",

}

TY - JOUR

T1 - Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range

AU - Shau, R.

AU - Ortsiefer, M.

AU - Zigldrum, M.

AU - Rosskopf, J.

AU - Böhm, G.

AU - Köhler, F.

AU - Amann, M. C.

PY - 2000/7/20

Y1 - 2000/7/20

N2 - The buried tunnel junction (BTJ) method has been successfully used to realize the electrically pumped 1.83 μm vertical cavity surface emitting lasers. Excellent continuous wave performance with sub-milliamp threshold currents, differential quantum efficiencies up to 26% and singlemode operation has been achieved.

AB - The buried tunnel junction (BTJ) method has been successfully used to realize the electrically pumped 1.83 μm vertical cavity surface emitting lasers. Excellent continuous wave performance with sub-milliamp threshold currents, differential quantum efficiencies up to 26% and singlemode operation has been achieved.

UR - https://www.scopus.com/pages/publications/0034225534

U2 - 10.1049/el:20000934

DO - 10.1049/el:20000934

M3 - Article

AN - SCOPUS:0034225534

SN - 0013-5194

VL - 36

SP - 1286

EP - 1287

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range

Abstract

Access to Document

Other files and links

Fingerprint

Cite this