Low threshold 2.72 μm GaInAsSb/ AlGaAsSb multiple-quantum-well laser

M. Grau; C. Lin; M. C. Amann

doi:10.1049/el:20021126

Low threshold 2.72 μm GaInAsSb/ AlGaAsSb multiple-quantum-well laser

M. Grau, C. Lin, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ridge waveguide GalnAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm² has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.

Original language	English
Pages (from-to)	1678-1679
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	25
DOIs	https://doi.org/10.1049/el:20021126
State	Published - 5 Dec 2002

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@article{7f75d8f789ed4ae88e4a29da3d2afc7c,

title = "Low threshold 2.72 μm GaInAsSb/ AlGaAsSb multiple-quantum-well laser",

abstract = "Ridge waveguide GalnAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm2 has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.",

author = "M. Grau and C. Lin and Amann, \{M. C.\}",

year = "2002",

month = dec,

day = "5",

doi = "10.1049/el:20021126",

language = "English",

volume = "38",

pages = "1678--1679",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "25",

}

TY - JOUR

T1 - Low threshold 2.72 μm GaInAsSb/ AlGaAsSb multiple-quantum-well laser

AU - Grau, M.

AU - Lin, C.

AU - Amann, M. C.

PY - 2002/12/5

Y1 - 2002/12/5

N2 - Ridge waveguide GalnAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm2 has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.

AB - Ridge waveguide GalnAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm2 has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0037028280&partnerID=8YFLogxK

U2 - 10.1049/el:20021126

DO - 10.1049/el:20021126

M3 - Article

AN - SCOPUS:0037028280

SN - 0013-5194

VL - 38

SP - 1678

EP - 1679

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Low threshold 2.72 μm GaInAsSb/ AlGaAsSb multiple-quantum-well laser

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