TY - GEN
T1 - Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon
AU - Stelzer, M.
AU - Jung, M.
AU - Wurstbauer, U.
AU - Holleitner, A. W.
AU - Kreupl, F.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts [1]-[3] but are known to diffuse into the active region under high current stress. Recently we demonstrated [4], [5] that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ∼ 900 °C. In this paper we demonstrate now that the deposition of graphenic carbon is possible at 100-400 °C by a modified sputter process. We show that the sputtered carbon-silicon (SC-Si) contact is over 109 times more stable against high current stress pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. Doping SC by nitrogen (CN) leads to an even lower resistivity and improved stability. The finding that there is a low temperature approach for using the superb carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a plethora of other applications.
AB - Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts [1]-[3] but are known to diffuse into the active region under high current stress. Recently we demonstrated [4], [5] that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ∼ 900 °C. In this paper we demonstrate now that the deposition of graphenic carbon is possible at 100-400 °C by a modified sputter process. We show that the sputtered carbon-silicon (SC-Si) contact is over 109 times more stable against high current stress pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. Doping SC by nitrogen (CN) leads to an even lower resistivity and improved stability. The finding that there is a low temperature approach for using the superb carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a plethora of other applications.
UR - http://www.scopus.com/inward/record.url?scp=85061816634&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614643
DO - 10.1109/IEDM.2018.8614643
M3 - Conference contribution
AN - SCOPUS:85061816634
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 11.2.1-11.2.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -