Low temperature properties of the p-type surface conductivity of diamond

C. E. Nebel; F. Ertl; C. Sauerer; M. Stutzmann; C. F.O. Graeff; P. Bergonzo; O. A. Williams; R. B. Jackman

doi:10.1016/S0925-9635(01)00586-6

Low temperature properties of the p-type surface conductivity of diamond

C. E. Nebel, F. Ertl, C. Sauerer, M. Stutzmann, C. F.O. Graeff, P. Bergonzo, O. A. Williams, R. B. Jackman

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34-350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20-70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm²/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination. CH dipole disorder or surface roughness and partially extended.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00586-6
State	Published - Mar 2002

Keywords

Conductivity
Hall effect
Hydrogen terminated diamond
Low temperature magneto-transport
Surface conductivity

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10.1016/S0925-9635(01)00586-6

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title = "Low temperature properties of the p-type surface conductivity of diamond",

abstract = "Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34-350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20-70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm2/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination. CH dipole disorder or surface roughness and partially extended.",

keywords = "Conductivity, Hall effect, Hydrogen terminated diamond, Low temperature magneto-transport, Surface conductivity",

author = "Nebel, {C. E.} and F. Ertl and C. Sauerer and M. Stutzmann and Graeff, {C. F.O.} and P. Bergonzo and Williams, {O. A.} and Jackman, {R. B.}",

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TY - JOUR

T1 - Low temperature properties of the p-type surface conductivity of diamond

AU - Nebel, C. E.

AU - Ertl, F.

AU - Sauerer, C.

AU - Stutzmann, M.

AU - Graeff, C. F.O.

AU - Bergonzo, P.

AU - Williams, O. A.

AU - Jackman, R. B.

PY - 2002/3

Y1 - 2002/3

N2 - Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34-350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20-70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm2/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination. CH dipole disorder or surface roughness and partially extended.

AB - Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34-350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20-70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm2/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination. CH dipole disorder or surface roughness and partially extended.

KW - Conductivity

KW - Hall effect

KW - Hydrogen terminated diamond

KW - Low temperature magneto-transport

KW - Surface conductivity

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U2 - 10.1016/S0925-9635(01)00586-6

DO - 10.1016/S0925-9635(01)00586-6

M3 - Article

AN - SCOPUS:0036508518

SN - 0925-9635

VL - 11

SP - 351

EP - 354

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

Low temperature properties of the p-type surface conductivity of diamond

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Keywords

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