Low-temperature atomic layer deposition of copper(II) oxide thin films

Tomi Iivonen; Jani Hämäläinen; Benoît Marchand; Kenichiro Mizohata; Miika Mattinen; Georgi Popov; Jiyeon Kim; Roland A. Fischer; Markku Leskelä

doi:10.1116/1.4933089

Low-temperature atomic layer deposition of copper(II) oxide thin films

Tomi Iivonen, Jani Hämäläinen, Benoît Marchand, Kenichiro Mizohata, Miika Mattinen, Georgi Popov, Jiyeon Kim, Roland A. Fischer, Markku Leskelä

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)₂] and ozone in a temperature window of 80-140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2-0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

Original language	English
Article number	01A109
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	34
Issue number	1
DOIs	https://doi.org/10.1116/1.4933089
State	Published - 1 Jan 2016
Externally published	Yes

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abstract = "Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80-140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2-0.3 {\AA} per cycle. Impurity content in the films was relatively small for a low temperature ALD process.",

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T1 - Low-temperature atomic layer deposition of copper(II) oxide thin films

AU - Iivonen, Tomi

AU - Hämäläinen, Jani

AU - Marchand, Benoît

AU - Mizohata, Kenichiro

AU - Mattinen, Miika

AU - Popov, Georgi

AU - Kim, Jiyeon

AU - Fischer, Roland A.

AU - Leskelä, Markku

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AB - Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80-140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2-0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

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Low-temperature atomic layer deposition of copper(II) oxide thin films

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