Abstract
Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80-140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2-0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.
Original language | English |
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Article number | 01A109 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 34 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2016 |
Externally published | Yes |