Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

Byoung H. Lee; Jae K. Hwang; Jae W. Nam; Song U. Lee; Jun T. Kim; Sang M. Koo; A. Baunemann; Roland A. Fischer; Myung M. Sung

doi:10.1002/anie.200900414

Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

Byoung H. Lee
, Jae K. Hwang
, Jae W. Nam
, Song U. Lee
, Jun T. Kim
, Sang M. Koo
, A. Baunemann
, Roland A. Fischer
, Myung M. Sung

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH₂NMe ₂)₂] with Et₂Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

Original language	English
Pages (from-to)	4536-4539
Number of pages	4
Journal	Angewandte Chemie International Edition in English
Volume	48
Issue number	25
DOIs	https://doi.org/10.1002/anie.200900414
State	Published - 8 Jun 2009
Externally published	Yes

Keywords

Atomic layer deposition
Copper
Surface chemistry
Thin films
Zinc

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10.1002/anie.200900414

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Lee, B. H., Hwang, J. K., Nam, J. W., Lee, S. U., Kim, J. T., Koo, S. M., Baunemann, A., Fischer, R. A., & Sung, M. M. (2009). Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc. Angewandte Chemie International Edition in English, 48(25), 4536-4539. https://doi.org/10.1002/anie.200900414

@article{34f60258524643af865724f1240ff3b0,

title = "Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc",

abstract = "A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.",

keywords = "Atomic layer deposition, Copper, Surface chemistry, Thin films, Zinc",

author = "Lee, \{Byoung H.\} and Hwang, \{Jae K.\} and Nam, \{Jae W.\} and Lee, \{Song U.\} and Kim, \{Jun T.\} and Koo, \{Sang M.\} and A. Baunemann and Fischer, \{Roland A.\} and Sung, \{Myung M.\}",

year = "2009",

month = jun,

day = "8",

doi = "10.1002/anie.200900414",

language = "English",

volume = "48",

pages = "4536--4539",

journal = "Angewandte Chemie International Edition in English",

issn = "1433-7851",

publisher = "John Wiley and Sons Ltd",

number = "25",

}

Lee, BH, Hwang, JK, Nam, JW, Lee, SU, Kim, JT, Koo, SM, Baunemann, A, Fischer, RA & Sung, MM 2009, 'Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc', Angewandte Chemie International Edition in English, vol. 48, no. 25, pp. 4536-4539. https://doi.org/10.1002/anie.200900414

Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc. / Lee, Byoung H.; Hwang, Jae K.; Nam, Jae W. et al.
In: Angewandte Chemie International Edition in English, Vol. 48, No. 25, 08.06.2009, p. 4536-4539.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Low-temperature atomic layer deposition of copper metal thin films

T2 - Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

AU - Lee, Byoung H.

AU - Hwang, Jae K.

AU - Nam, Jae W.

AU - Lee, Song U.

AU - Kim, Jun T.

AU - Koo, Sang M.

AU - Baunemann, A.

AU - Fischer, Roland A.

AU - Sung, Myung M.

PY - 2009/6/8

Y1 - 2009/6/8

N2 - A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

AB - A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

KW - Atomic layer deposition

KW - Copper

KW - Surface chemistry

KW - Thin films

KW - Zinc

UR - https://www.scopus.com/pages/publications/70349959811

U2 - 10.1002/anie.200900414

DO - 10.1002/anie.200900414

M3 - Article

AN - SCOPUS:70349959811

SN - 1433-7851

VL - 48

SP - 4536

EP - 4539

JO - Angewandte Chemie International Edition in English

JF - Angewandte Chemie International Edition in English

IS - 25

ER -

Low-temperature atomic layer deposition of copper metal thin films: Self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc

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Keywords

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