Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

M. Arzberger; M. Lohner; G. Böhm; M. C. Amann

doi:10.1049/el:20000039

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

M. Arzberger, M. Lohner, G. Böhm, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A lattice matched p⁺/n⁺-InGaAs tunnel junction for use in the realization of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n⁺/p⁺ InGaAs layers grown by solid source molecular beam epitaxy show ohmic behavior and very low specific contact resistivities of approximately 3×10⁶ Ωcm².

Original language	English
Pages (from-to)	87-88
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	1
DOIs	https://doi.org/10.1049/el:20000039
State	Published - 6 Jan 2000

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@article{4c5da21f541b46e8a1a95424a6081586,

title = "Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction",

abstract = "A lattice matched p+/n+-InGaAs tunnel junction for use in the realization of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ InGaAs layers grown by solid source molecular beam epitaxy show ohmic behavior and very low specific contact resistivities of approximately 3×106 Ωcm2.",

author = "M. Arzberger and M. Lohner and G. B{\"o}hm and Amann, {M. C.}",

year = "2000",

month = jan,

day = "6",

doi = "10.1049/el:20000039",

language = "English",

volume = "36",

pages = "87--88",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

AU - Arzberger, M.

AU - Lohner, M.

AU - Böhm, G.

AU - Amann, M. C.

PY - 2000/1/6

Y1 - 2000/1/6

N2 - A lattice matched p+/n+-InGaAs tunnel junction for use in the realization of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ InGaAs layers grown by solid source molecular beam epitaxy show ohmic behavior and very low specific contact resistivities of approximately 3×106 Ωcm2.

AB - A lattice matched p+/n+-InGaAs tunnel junction for use in the realization of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ InGaAs layers grown by solid source molecular beam epitaxy show ohmic behavior and very low specific contact resistivities of approximately 3×106 Ωcm2.

UR - http://www.scopus.com/inward/record.url?scp=0033640376&partnerID=8YFLogxK

U2 - 10.1049/el:20000039

DO - 10.1049/el:20000039

M3 - Article

AN - SCOPUS:0033640376

SN - 0013-5194

VL - 36

SP - 87

EP - 88

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Abstract

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