Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

S. Arafin; A. Bachmann; K. Kashani-Shirazi; S. Priyabadini; M. C. Amann

doi:10.1049/iet-opt.2009.0038

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10^-6Ωcm² without any annealing are obtained. The resistivity decreases to 3.7×10 ^-6Ωcm² after annealing at 350°C for 90s.

Original language	English
Pages (from-to)	259-263
Number of pages	5
Journal	IET Optoelectronics
Volume	3
Issue number	6
DOIs	https://doi.org/10.1049/iet-opt.2009.0038
State	Published - 2009

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abstract = "The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10-6Ωcm2 without any annealing are obtained. The resistivity decreases to 3.7×10 -6Ωcm2 after annealing at 350°C for 90s.",

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AU - Arafin, S.

AU - Bachmann, A.

AU - Kashani-Shirazi, K.

AU - Priyabadini, S.

AU - Amann, M. C.

PY - 2009

Y1 - 2009

N2 - The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10-6Ωcm2 without any annealing are obtained. The resistivity decreases to 3.7×10 -6Ωcm2 after annealing at 350°C for 90s.

AB - The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10-6Ωcm2 without any annealing are obtained. The resistivity decreases to 3.7×10 -6Ωcm2 after annealing at 350°C for 90s.

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JO - IET Optoelectronics

JF - IET Optoelectronics

IS - 6

ER -

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

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