Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, M. C. Amann

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10-6Ωcm2 without any annealing are obtained. The resistivity decreases to 3.7×10 -6Ωcm2 after annealing at 350°C for 90s.

Original languageEnglish
Pages (from-to)259-263
Number of pages5
JournalIET Optoelectronics
Issue number6
StatePublished - 2009


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