Low-resistive metal/n+-InAsSb/n-GaSb contacts

C. Lauer, O. Dier, M. C. Amann

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


We present low-resistive electrical contacts to n-type GaSb with Te doping of 5 × 1017 cm-3 using a Ti/Pt/Au (1/35/275 nm) metalization sequence and an intermediate InAsSb contact layer with n-doping of 1 × 1020 cm-3 (also Te). The high doping level is achieved during growth, so in-diffusion of dopants is not required. To reduce the impact of the native oxide layer we remove it in a sputter-etching process using Ar ions and afterwards deposit the metalization in the same chamber. No annealing is necessary to achieve ohmic IV-characteristics with a resistivity as low as 5.1 × 10-6 Ω cm2. It improves to 3. 3 × 10-6 Ω cm2 after annealing at 350 °C for 90 s. The resistivity slightly increases for deeper etching of the native oxide, which is probably due to surface damage induced during the sputter-etching process.

Original languageEnglish
Article number011
Pages (from-to)1274-1277
Number of pages4
JournalSemiconductor Science and Technology
Issue number9
StatePublished - 1 Sep 2006


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