Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Markus Ortsiefer; Robert Shau; Gerhard Böhm; Fabian Köhler; Gerhard Abstreiter; Markus Christian Amann

doi:10.1143/jjap.39.1727

Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Markus Ortsiefer, Robert Shau, Gerhard Böhm, Fabian Köhler, Gerhard Abstreiter, Markus Christian Amann

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3 × 10^-6 Ωcm²) tunnel junction. The substitution of high-resistive p-type confining layers by low-resistive n-type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance (U < 1 V at 3 kAcm^-2) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.

Original language	English
Pages (from-to)	1727-1729
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.39.1727
State	Published - 2000

Keywords

InGaAlAs/InP
Long wavelength
Optical communication
Semiconductor laser
Surface emitting laser
Tunnel junction

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10.1143/jjap.39.1727

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title = "Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers",

abstract = "A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3 × 10-6 Ωcm2) tunnel junction. The substitution of high-resistive p-type confining layers by low-resistive n-type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance (U < 1 V at 3 kAcm-2) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.",

keywords = "InGaAlAs/InP, Long wavelength, Optical communication, Semiconductor laser, Surface emitting laser, Tunnel junction",

author = "Markus Ortsiefer and Robert Shau and Gerhard B{\"o}hm and Fabian K{\"o}hler and Gerhard Abstreiter and Amann, {Markus Christian}",

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doi = "10.1143/jjap.39.1727",

language = "English",

volume = "39",

pages = "1727--1729",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

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T1 - Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

AU - Ortsiefer, Markus

AU - Shau, Robert

AU - Böhm, Gerhard

AU - Köhler, Fabian

AU - Abstreiter, Gerhard

AU - Amann, Markus Christian

PY - 2000

Y1 - 2000

N2 - A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3 × 10-6 Ωcm2) tunnel junction. The substitution of high-resistive p-type confining layers by low-resistive n-type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance (U < 1 V at 3 kAcm-2) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.

AB - A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3 × 10-6 Ωcm2) tunnel junction. The substitution of high-resistive p-type confining layers by low-resistive n-type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance (U < 1 V at 3 kAcm-2) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.

KW - InGaAlAs/InP

KW - Long wavelength

KW - Optical communication

KW - Semiconductor laser

KW - Surface emitting laser

KW - Tunnel junction

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U2 - 10.1143/jjap.39.1727

DO - 10.1143/jjap.39.1727

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VL - 39

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 A

ER -

Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

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Keywords

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