Low-frequency noise of integrated poly-silicon resistors

R. Brederlow; W. Weber; C. Dahl; D. Schmitt-Landsiedel; R. Thewes

doi:10.1109/16.925245

Low-frequency noise of integrated poly-silicon resistors

R. Brederlow, W. Weber, C. Dahl, D. Schmitt-Landsiedel, R. Thewes

Infineon Technologies AG

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

This paper presents an analytical first principle model for the low-frequency noise current of poly-silicon layers used as resistors in analog CMOS applications. The observed noise is much higher than predicted by the models mostly used in circuit simulation. The dependence on specific processing parameters such as doping or deposition techniques are investigated and explained. The model is confirmed by measurement of deviations in the flicker noise behavior of small size resistors. Guidelines for analog circuit design and a noise model for circuit simulation are presented.

Original language	English
Pages (from-to)	1180-1187
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	6
DOIs	https://doi.org/10.1109/16.925245
State	Published - Jun 2001
Externally published	Yes

Keywords

1/f-noise
Analog CMOS
Integrated resistors
Low-frequency noise
Mixed-signal CMOS
Noise
Poly-silicon
RF-CMOS

Access to Document

10.1109/16.925245

Cite this

@article{4124092c911445d9927dc89fa75098be,

title = "Low-frequency noise of integrated poly-silicon resistors",

abstract = "This paper presents an analytical first principle model for the low-frequency noise current of poly-silicon layers used as resistors in analog CMOS applications. The observed noise is much higher than predicted by the models mostly used in circuit simulation. The dependence on specific processing parameters such as doping or deposition techniques are investigated and explained. The model is confirmed by measurement of deviations in the flicker noise behavior of small size resistors. Guidelines for analog circuit design and a noise model for circuit simulation are presented.",

keywords = "1/f-noise, Analog CMOS, Integrated resistors, Low-frequency noise, Mixed-signal CMOS, Noise, Poly-silicon, RF-CMOS",

author = "R. Brederlow and W. Weber and C. Dahl and D. Schmitt-Landsiedel and R. Thewes",

year = "2001",

month = jun,

doi = "10.1109/16.925245",

language = "English",

volume = "48",

pages = "1180--1187",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Low-frequency noise of integrated poly-silicon resistors

AU - Brederlow, R.

AU - Weber, W.

AU - Dahl, C.

AU - Schmitt-Landsiedel, D.

AU - Thewes, R.

PY - 2001/6

Y1 - 2001/6

N2 - This paper presents an analytical first principle model for the low-frequency noise current of poly-silicon layers used as resistors in analog CMOS applications. The observed noise is much higher than predicted by the models mostly used in circuit simulation. The dependence on specific processing parameters such as doping or deposition techniques are investigated and explained. The model is confirmed by measurement of deviations in the flicker noise behavior of small size resistors. Guidelines for analog circuit design and a noise model for circuit simulation are presented.

AB - This paper presents an analytical first principle model for the low-frequency noise current of poly-silicon layers used as resistors in analog CMOS applications. The observed noise is much higher than predicted by the models mostly used in circuit simulation. The dependence on specific processing parameters such as doping or deposition techniques are investigated and explained. The model is confirmed by measurement of deviations in the flicker noise behavior of small size resistors. Guidelines for analog circuit design and a noise model for circuit simulation are presented.

KW - 1/f-noise

KW - Analog CMOS

KW - Integrated resistors

KW - Low-frequency noise

KW - Mixed-signal CMOS

KW - Noise

KW - Poly-silicon

KW - RF-CMOS

UR - http://www.scopus.com/inward/record.url?scp=0035366366&partnerID=8YFLogxK

U2 - 10.1109/16.925245

DO - 10.1109/16.925245

M3 - Article

AN - SCOPUS:0035366366

SN - 0018-9383

VL - 48

SP - 1180

EP - 1187

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Low-frequency noise of integrated poly-silicon resistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this