Abstract
The low-frequency noise (LF-noise) in deep sub-micron MOSFETs is experimentally studied and modeled. A novel modeling approach is presented, including detailed modeling of statistical effects. The physics-related parameters which cause statistical fluctuations in LF-noise performance between devices are detailed. A compact model is developed for implementing these analog-yield-relevant effects in circuit simulation tools.
Original language | English |
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Pages | 15-20 |
Number of pages | 6 |
State | Published - 2004 |
Externally published | Yes |
Event | Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium - Porto De Galinhas, Pernambuco, Brazil Duration: 7 Sep 2004 → 11 Sep 2004 |
Conference
Conference | Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium |
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Country/Territory | Brazil |
City | Porto De Galinhas, Pernambuco |
Period | 7/09/04 → 11/09/04 |