Abstract
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) based on the AlGaInAs/InP material system are demonstrated in the wavelength range from 1.3 to 2.0 μm. Single mode emission with an output power of up to 1.7mW at room temperature was observed in continuous-wave mode. Furthermore, high-speed modulation up to 10Gbit/s was realized and micro-mechanically tunable VCSELs based on a two-chip concept were investigated showing a tuning range of 30 nm under single mode condition.
| Original language | English |
|---|---|
| Pages (from-to) | 695-699 |
| Number of pages | 5 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 2004 |
| Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004 |