Long-wavelength InP-based vertical-cavity surface-emitting lasers

M. Ortsiefer; M. C. Amann

Long-wavelength InP-based vertical-cavity surface-emitting lasers

M. Ortsiefer, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to conference › Paper › peer-review

Abstract

Long-wavelength InP-based vertical cavity surface emitting laser was presented. The device structure was based on buried tunnel junction concept and yielded small Joule heating and sufficient heatsinking capabilities. Joule heating was reduced by the application of a low-resistance tunnel junction which was laterally structured and subsequently regrown to provide a self-aligned electrical and optical confinement. Results demonstrated that for small apertures a sufficient output power of around 0.5 mW could be maintained at high operating temperatures around 80°C.

Original language	English
Pages	437
Number of pages	1
State	Published - 2002
Event	Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2002)
Country/Territory	United States
City	Long Beach, CA
Period	19/05/02 → 24/05/02

Cite this

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title = "Long-wavelength InP-based vertical-cavity surface-emitting lasers",

abstract = "Long-wavelength InP-based vertical cavity surface emitting laser was presented. The device structure was based on buried tunnel junction concept and yielded small Joule heating and sufficient heatsinking capabilities. Joule heating was reduced by the application of a low-resistance tunnel junction which was laterally structured and subsequently regrown to provide a self-aligned electrical and optical confinement. Results demonstrated that for small apertures a sufficient output power of around 0.5 mW could be maintained at high operating temperatures around 80°C.",

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note = "Conference on Lasers and Electro-Optics (CLEO 2002) ; Conference date: 19-05-2002 Through 24-05-2002",

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AU - Ortsiefer, M.

AU - Amann, M. C.

PY - 2002

Y1 - 2002

N2 - Long-wavelength InP-based vertical cavity surface emitting laser was presented. The device structure was based on buried tunnel junction concept and yielded small Joule heating and sufficient heatsinking capabilities. Joule heating was reduced by the application of a low-resistance tunnel junction which was laterally structured and subsequently regrown to provide a self-aligned electrical and optical confinement. Results demonstrated that for small apertures a sufficient output power of around 0.5 mW could be maintained at high operating temperatures around 80°C.

AB - Long-wavelength InP-based vertical cavity surface emitting laser was presented. The device structure was based on buried tunnel junction concept and yielded small Joule heating and sufficient heatsinking capabilities. Joule heating was reduced by the application of a low-resistance tunnel junction which was laterally structured and subsequently regrown to provide a self-aligned electrical and optical confinement. Results demonstrated that for small apertures a sufficient output power of around 0.5 mW could be maintained at high operating temperatures around 80°C.

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M3 - Paper

AN - SCOPUS:0036457621

SP - 437

T2 - Conference on Lasers and Electro-Optics (CLEO 2002)

Y2 - 19 May 2002 through 24 May 2002

ER -

Long-wavelength InP-based vertical-cavity surface-emitting lasers

Abstract

Conference

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