Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

G. K. Kuang; G. Böhm; M. Grau; G. Rösel; M. C. Amann

doi:10.1016/S0022-0248(01)00716-3

Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

G. K. Kuang
, G. Böhm
, M. Grau
, G. Rösel
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm² at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.

Original language	English
Pages (from-to)	334-337
Number of pages	4
Journal	Journal of Crystal Growth
Volume	227
Issue number	228
DOIs	https://doi.org/10.1016/S0022-0248(01)00716-3
State	Published - Jul 2001

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B3. Laser diodes

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10.1016/S0022-0248(01)00716-3

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title = "Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE",

abstract = "We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. Laser diodes",

author = "Kuang, \{G. K.\} and G. B{\"o}hm and M. Grau and G. R{\"o}sel and Amann, \{M. C.\}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00716-3",

language = "English",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

AU - Kuang, G. K.

AU - Böhm, G.

AU - Grau, M.

AU - Rösel, G.

AU - Amann, M. C.

PY - 2001/7

Y1 - 2001/7

N2 - We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.

AB - We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting III-V materials

KW - B3. Laser diodes

UR - https://www.scopus.com/pages/publications/0035399222

U2 - 10.1016/S0022-0248(01)00716-3

DO - 10.1016/S0022-0248(01)00716-3

M3 - Article

AN - SCOPUS:0035399222

SN - 0022-0248

VL - 227

SP - 334

EP - 337

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 228

ER -

Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

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Keywords

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