Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

G. K. Kuang, G. Böhm, M. Grau, G. Rösel, M. C. Amann

Research output: Contribution to journalArticlepeer-review

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Abstract

We have grown InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.

Original languageEnglish
Pages (from-to)334-337
Number of pages4
JournalJournal of Crystal Growth
Volume227
Issue number228
DOIs
StatePublished - Jul 2001

Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B3. Laser diodes

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