Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

G. K. Kuang; G. Böhm; N. Graf; M. Grau; G. Rösel; R. Meyer; M. C. Amann

doi:10.1049/el:20001328

Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

G. K. Kuang, G. Böhm, N. Graf, M. Grau, G. Rösel, R. Meyer, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

InGaAs-InGaAlAs-InP quantum well (QW) diode lasers are grown with wavelengths as long as 2208 mm using solid-source molecular-beam epitaxy. A photoluminescence (PL) spectrum at 4.2 K and X ray diffraction of the sample were measured. A continuous wave threshold current density as low as 370 A/cm² and a characteristic temperature of 53 K have been achieved.

Original language	English
Pages (from-to)	1849-1851
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	22
DOIs	https://doi.org/10.1049/el:20001328
State	Published - 26 Oct 2000

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abstract = "InGaAs-InGaAlAs-InP quantum well (QW) diode lasers are grown with wavelengths as long as 2208 mm using solid-source molecular-beam epitaxy. A photoluminescence (PL) spectrum at 4.2 K and X ray diffraction of the sample were measured. A continuous wave threshold current density as low as 370 A/cm2 and a characteristic temperature of 53 K have been achieved.",

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T1 - Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

AU - Kuang, G. K.

AU - Böhm, G.

AU - Graf, N.

AU - Grau, M.

AU - Rösel, G.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2000/10/26

Y1 - 2000/10/26

N2 - InGaAs-InGaAlAs-InP quantum well (QW) diode lasers are grown with wavelengths as long as 2208 mm using solid-source molecular-beam epitaxy. A photoluminescence (PL) spectrum at 4.2 K and X ray diffraction of the sample were measured. A continuous wave threshold current density as low as 370 A/cm2 and a characteristic temperature of 53 K have been achieved.

AB - InGaAs-InGaAlAs-InP quantum well (QW) diode lasers are grown with wavelengths as long as 2208 mm using solid-source molecular-beam epitaxy. A photoluminescence (PL) spectrum at 4.2 K and X ray diffraction of the sample were measured. A continuous wave threshold current density as low as 370 A/cm2 and a characteristic temperature of 53 K have been achieved.

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U2 - 10.1049/el:20001328

DO - 10.1049/el:20001328

M3 - Article

AN - SCOPUS:0342468816

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VL - 36

SP - 1849

EP - 1851

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

Abstract

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