Long - term stability of passive millimeterwave circuits on high-resistivity silicon substrates

R. H. Rasshofer; E. M. Biebl; K. M. Strohm; J. F. Luy

Long - term stability of passive millimeterwave circuits on high-resistivity silicon substrates

R. H. Rasshofer, E. M. Biebl, K. M. Strohm, J. F. Luy

Associate Professorship of Very High Frequency Technology

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO₂ passivation layer had been found though chips with passivation showed larger photo-sensitivity and higher loss.

Original language	English
Pages (from-to)	585-588
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
State	Published - 1999
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 13 Jun 1999 → 19 Jun 1999

Cite this

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abstract = "We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO2 passivation layer had been found though chips with passivation showed larger photo-sensitivity and higher loss.",

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T1 - Long - term stability of passive millimeterwave circuits on high-resistivity silicon substrates

AU - Rasshofer, R. H.

AU - Biebl, E. M.

AU - Strohm, K. M.

AU - Luy, J. F.

PY - 1999

Y1 - 1999

N2 - We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO2 passivation layer had been found though chips with passivation showed larger photo-sensitivity and higher loss.

AB - We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO2 passivation layer had been found though chips with passivation showed larger photo-sensitivity and higher loss.

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M3 - Conference article

AN - SCOPUS:0033362798

SN - 0149-645X

VL - 2

SP - 585

EP - 588

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'

Y2 - 13 June 1999 through 19 June 1999

ER -

Long - term stability of passive millimeterwave circuits on high-resistivity silicon substrates

Abstract

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