Long-term investigations of RF-MEMS switches on failure mechanisms induced by dielectric charging

Regine Behielt, Thomas Künzig, Gabriele Schrag

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present an extensive study on dielectric charging effects, one of the major problems that limit the reliability of electrostatically actuated RF-MEMS switches and, thus, their way into a broad commercial application. For the first time, we are able to provide quantitative statements on the amount of charge injected into the dielectric layers. They result from monitoring the long-term evolution of the switching voltages of the device under test recorded by a novel, on-purpose developed measurement set-up, which enables temperature-dependent investigations. Furthermore, the origin of the parasitic charges, their impact on the switching operation and measures to remove them from the dielectric layers could be identified.

Original languageEnglish
Title of host publicationDTIP 2014 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9782355000287
DOIs
StatePublished - 9 Mar 2014
Event2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2014 - Cannes, France
Duration: 2 Apr 20144 Apr 2014

Publication series

NameDTIP 2014 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Conference

Conference2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2014
Country/TerritoryFrance
CityCannes
Period2/04/144/04/14

Keywords

  • RF-MEMS switch
  • dielectric charging
  • electromechanical model
  • long-term characterization

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