Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.