Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

J. Bauer; D. Schuh; E. Uccelli; R. Schulz; A. Kress; F. Hofbauer; J. J. Finley; G. Abstreiter

doi:10.1063/1.1819987

Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

J. Bauer, D. Schuh, E. Uccelli, R. Schulz, A. Kress, F. Hofbauer, J. J. Finley, G. Abstreiter

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

Original language	English
Pages (from-to)	4750-4752
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	20
DOIs	https://doi.org/10.1063/1.1819987
State	Published - 15 Nov 2004

Access to Document

10.1063/1.1819987

Cite this

@article{91501dea694b4f8fbf388fc2cb7de37b,

title = "Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs",

abstract = "We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.",

author = "J. Bauer and D. Schuh and E. Uccelli and R. Schulz and A. Kress and F. Hofbauer and Finley, \{J. J.\} and G. Abstreiter",

year = "2004",

month = nov,

day = "15",

doi = "10.1063/1.1819987",

language = "English",

volume = "85",

pages = "4750--4752",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

AU - Bauer, J.

AU - Schuh, D.

AU - Uccelli, E.

AU - Schulz, R.

AU - Kress, A.

AU - Hofbauer, F.

AU - Finley, J. J.

AU - Abstreiter, G.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

AB - We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

UR - http://www.scopus.com/inward/record.url?scp=10944269093&partnerID=8YFLogxK

U2 - 10.1063/1.1819987

DO - 10.1063/1.1819987

M3 - Article

AN - SCOPUS:10944269093

SN - 0003-6951

VL - 85

SP - 4750

EP - 4752

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this