@inproceedings{60238e94efe240e6a8493b79bb0c32f7,
title = "Local temperature distribution in Si-MOSFETs studied by micro-raman spectroscopy",
abstract = "The local rise of lattice temperatures in enhancement MOSFET's is analyzed by the frequency shift of the silicon optical phonon using Raman spectroscopy with submicron spatial resolution. Operating the devices beyond saturation a source drain asymmetry is observed corresponding to the heat dissipation profile peaked at the pinch off region. A reduction of channel length at standard conditions leads to a local temperature increase due to the enhanced electrical power. An anisotropic behaviour of the temperature distribution is also found in the substrate surrounding the MOSFET, which is related to the geometric shape of the heat source. The experimental results are in good agreement with a simnple model calculation based on device parameters.",
author = "R. Ostermeir and K. Brunner and G. Abstreiter and W. Weber",
note = "Publisher Copyright: {\textcopyright} 1990 IOP Publishing Ltd.; 20th European Solid State Device Research Conference, ESSDERC 1990 ; Conference date: 10-09-1990 Through 13-09-1990",
year = "1990",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "591--594",
editor = "W. Eccleston and Rosser, {P. J.}",
booktitle = "ESSDERC 1990 - 20th European Solid State Device Research Conference",
}