Local photocurrent generation in thin films of the topological insulator Bi2Se3

C. Kastl; T. Guan; X. Y. He; K. H. Wu; Y. Q. Li; A. W. Holleitner

doi:10.1063/1.4772547

Local photocurrent generation in thin films of the topological insulator Bi₂Se₃

C. Kastl
, T. Guan
, X. Y. He
, K. H. Wu
, Y. Q. Li
, A. W. Holleitner

Chair of Nanotechnology and Nanomaterials

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We report on the optoelectronic properties of thin films of Bi₂ Se₃ grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

Original language	English
Article number	251110
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4772547
State	Published - 17 Dec 2012

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abstract = "We report on the optoelectronic properties of thin films of Bi2 Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.",

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AU - Kastl, C.

AU - Guan, T.

AU - He, X. Y.

AU - Wu, K. H.

AU - Li, Y. Q.

AU - Holleitner, A. W.

PY - 2012/12/17

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N2 - We report on the optoelectronic properties of thin films of Bi2 Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

AB - We report on the optoelectronic properties of thin films of Bi2 Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

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DO - 10.1063/1.4772547

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VL - 101

JO - Applied Physics Letters

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Local photocurrent generation in thin films of the topological insulator Bi₂Se₃

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