Local photocurrent generation in thin films of the topological insulator Bi2Se3

C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, A. W. Holleitner

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Abstract

We report on the optoelectronic properties of thin films of Bi2 Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

Original languageEnglish
Article number251110
JournalApplied Physics Letters
Volume101
Issue number25
DOIs
StatePublished - 17 Dec 2012

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