Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

A. Gärtner; D. Schuh; A. W. Holleitner; J. P. Kotthaus

doi:10.1016/j.physe.2007.10.042

Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

A. Gärtner, D. Schuh, A. W. Holleitner, J. P. Kotthaus

Chair of Nanotechnology and Nanomaterials

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We demonstrate how to load indirect excitons into an electrostatic trap, which is formed in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO₂ area sandwiched between the surface of the GaAs heterostructure and a semi-transparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find that the trap can be filled with indirect excitons, as soon as the distance between the laser excitation and the trap is shorter than the effective diffusion length of the indirect excitons.

Original language	English
Pages (from-to)	1828-1831
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.10.042
State	Published - Apr 2008

Keywords

Double quantum wells
Excitons
III-V Semiconductors
Low-dimensional system

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10.1016/j.physe.2007.10.042

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title = "Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells",

abstract = "We demonstrate how to load indirect excitons into an electrostatic trap, which is formed in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semi-transparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find that the trap can be filled with indirect excitons, as soon as the distance between the laser excitation and the trap is shorter than the effective diffusion length of the indirect excitons.",

keywords = "Double quantum wells, Excitons, III-V Semiconductors, Low-dimensional system",

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T1 - Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

AU - Gärtner, A.

AU - Schuh, D.

AU - Holleitner, A. W.

AU - Kotthaus, J. P.

PY - 2008/4

Y1 - 2008/4

N2 - We demonstrate how to load indirect excitons into an electrostatic trap, which is formed in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semi-transparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find that the trap can be filled with indirect excitons, as soon as the distance between the laser excitation and the trap is shorter than the effective diffusion length of the indirect excitons.

AB - We demonstrate how to load indirect excitons into an electrostatic trap, which is formed in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semi-transparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find that the trap can be filled with indirect excitons, as soon as the distance between the laser excitation and the trap is shorter than the effective diffusion length of the indirect excitons.

KW - Double quantum wells

KW - Excitons

KW - III-V Semiconductors

KW - Low-dimensional system

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DO - 10.1016/j.physe.2007.10.042

M3 - Article

AN - SCOPUS:41349102732

SN - 1386-9477

VL - 40

SP - 1828

EP - 1831

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 6

ER -

Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

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Keywords

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