Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

R. Shau; H. Halbritter; F. Riemenschneider; M. Ortsiefer; J. Rosskopf; G. Böhm; M. Maute; P. Meissner; M. C. Amann

doi:10.1049/el:20031143

Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

R. Shau
, H. Halbritter
, F. Riemenschneider
, M. Ortsiefer
, J. Rosskopf
, G. Böhm
, M. Maute
, P. Meissner
, M. C. Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

Original language	English
Pages (from-to)	1728-1729
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	24
DOIs	https://doi.org/10.1049/el:20031143
State	Published - 27 Nov 2003

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10.1049/el:20031143

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title = "Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction",

abstract = "Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.",

author = "R. Shau and H. Halbritter and F. Riemenschneider and M. Ortsiefer and J. Rosskopf and G. B{\"o}hm and M. Maute and P. Meissner and Amann, \{M. C.\}",

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T1 - Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

AU - Shau, R.

AU - Halbritter, H.

AU - Riemenschneider, F.

AU - Ortsiefer, M.

AU - Rosskopf, J.

AU - Böhm, G.

AU - Maute, M.

AU - Meissner, P.

AU - Amann, M. C.

PY - 2003/11/27

Y1 - 2003/11/27

N2 - Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

AB - Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

UR - https://www.scopus.com/pages/publications/0344704054

U2 - 10.1049/el:20031143

DO - 10.1049/el:20031143

M3 - Article

AN - SCOPUS:0344704054

SN - 0013-5194

VL - 39

SP - 1728

EP - 1729

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

Abstract

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