Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

R. Shau; H. Halbritter; F. Riemenschneider; M. Ortsiefer; J. Rosskopf; G. Böhm; M. Maute; P. Meissner; M. C. Amann

doi:10.1049/el:20031143

Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Böhm, M. Maute, P. Meissner, M. C. Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

Original language	English
Pages (from-to)	1728-1729
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	24
DOIs	https://doi.org/10.1049/el:20031143
State	Published - 27 Nov 2003

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10.1049/el:20031143

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abstract = "Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.",

author = "R. Shau and H. Halbritter and F. Riemenschneider and M. Ortsiefer and J. Rosskopf and G. B{\"o}hm and M. Maute and P. Meissner and Amann, \{M. C.\}",

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T1 - Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

AU - Shau, R.

AU - Halbritter, H.

AU - Riemenschneider, F.

AU - Ortsiefer, M.

AU - Rosskopf, J.

AU - Böhm, G.

AU - Maute, M.

AU - Meissner, P.

AU - Amann, M. C.

PY - 2003/11/27

Y1 - 2003/11/27

N2 - Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

AB - Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

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U2 - 10.1049/el:20031143

DO - 10.1049/el:20031143

M3 - Article

AN - SCOPUS:0344704054

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VL - 39

SP - 1728

EP - 1729

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

Abstract

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