Linewidth broadening of quantum dot emission caused by temperature fluctuations

M. Arzberger, M. C. Amann

Research output: Contribution to journalArticlepeer-review

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Abstract

The temperature dependence of the homogeneous linewidth of optical transitions in a single semiconductor quantum dot (QD) due to temperature fluctuations is calculated. Since the temperature fluctuations are inversely proportional to the considered volume and the QD volume is very small, the temperature of a QD and therefore its energy states are not well defined. Therefore, the emission and absorption spectra are homogeneously broadened. The broadening is calculated for simplified cuboid-like electron and hole wavefunctions assuming spatially constant material parameters. The linewidth is strongly dependent on temperature and volume of the QD, whereas the shape of the wavefunction is less important. For cubic In0.5Ga0.5As QDs with volume (5 nm)3, the broadening is ~10 μeV below 100 K and reaches ~1.4 meV at room temperature.

Original languageEnglish
Pages (from-to)655-658
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume224
Issue number3
DOIs
StatePublished - Apr 2001

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