Linewidth broadening by 1/f noise in wavelength-tunable laser diodes

M. C. Amann; R. Hakimi; B. Borchert; S. Illek

doi:10.1063/1.118603

Linewidth broadening by 1/f noise in wavelength-tunable laser diodes

M. C. Amann
, R. Hakimi
, B. Borchert
, S. Illek

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The excess linewidth broadening of continuously tunable InGaAsP/InP laser diodes at 1.5 μm wavelength is investigated. Terminal electrical and FM noise measurements indicate that the recombination processes in the forward biased tuning region produce significant 1/f carrier noise. Below 1 MHz the 1/f noise dominates yielding a noise enhancement of about 30 dB at 1 kHz. The discrepancy observed so far between theoretically expected and measured spectral linewidth can be well resolved by taking into account this additional noise source.

Original language	English
Pages (from-to)	1512-1514
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	12
DOIs	https://doi.org/10.1063/1.118603
State	Published - 24 Mar 1997
Externally published	Yes

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10.1063/1.118603

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title = "Linewidth broadening by 1/f noise in wavelength-tunable laser diodes",

abstract = "The excess linewidth broadening of continuously tunable InGaAsP/InP laser diodes at 1.5 μm wavelength is investigated. Terminal electrical and FM noise measurements indicate that the recombination processes in the forward biased tuning region produce significant 1/f carrier noise. Below 1 MHz the 1/f noise dominates yielding a noise enhancement of about 30 dB at 1 kHz. The discrepancy observed so far between theoretically expected and measured spectral linewidth can be well resolved by taking into account this additional noise source.",

author = "Amann, \{M. C.\} and R. Hakimi and B. Borchert and S. Illek",

year = "1997",

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doi = "10.1063/1.118603",

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journal = "Applied Physics Letters",

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AU - Amann, M. C.

AU - Hakimi, R.

AU - Borchert, B.

AU - Illek, S.

PY - 1997/3/24

Y1 - 1997/3/24

N2 - The excess linewidth broadening of continuously tunable InGaAsP/InP laser diodes at 1.5 μm wavelength is investigated. Terminal electrical and FM noise measurements indicate that the recombination processes in the forward biased tuning region produce significant 1/f carrier noise. Below 1 MHz the 1/f noise dominates yielding a noise enhancement of about 30 dB at 1 kHz. The discrepancy observed so far between theoretically expected and measured spectral linewidth can be well resolved by taking into account this additional noise source.

AB - The excess linewidth broadening of continuously tunable InGaAsP/InP laser diodes at 1.5 μm wavelength is investigated. Terminal electrical and FM noise measurements indicate that the recombination processes in the forward biased tuning region produce significant 1/f carrier noise. Below 1 MHz the 1/f noise dominates yielding a noise enhancement of about 30 dB at 1 kHz. The discrepancy observed so far between theoretically expected and measured spectral linewidth can be well resolved by taking into account this additional noise source.

UR - https://www.scopus.com/pages/publications/0004547369

U2 - 10.1063/1.118603

DO - 10.1063/1.118603

M3 - Article

AN - SCOPUS:0004547369

SN - 0003-6951

VL - 70

SP - 1512

EP - 1514

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Linewidth broadening by 1/f noise in wavelength-tunable laser diodes

Abstract

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