Light-induced modification of a-SiOx II: Laser crystallization

Andreas Janotta; Yavuz Dikce; Matthias Schmidt; Christopher Eisele; Martin Stutzmann; Martina Luysberg; Lothar Houben

doi:10.1063/1.1667008

Light-induced modification of a-SiO_x II: Laser crystallization

Andreas Janotta, Yavuz Dikce, Matthias Schmidt, Christopher Eisele, Martin Stutzmann, Martina Luysberg, Lothar Houben

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The laser irradiation and crystallization behavior of amorphous silicon suboxides were analyzed. The surface melting threshold of the different samples was found to decrease linearly with oxygen from above 80 mJ/cm² for a-Si to approximately 40 mJ/cm². It was demonstrated that for silicon suboxides with oxygen concentrations below 40 atomic% a phase separation in Si crystallites and in a surrounding SiO_x matrix occurs upon laser irradiation. It was found that increasing oxygen content in the samples prevents an efficient formation of nc-Si or μc-si inclusions.

Original language	English
Pages (from-to)	4060-4068
Number of pages	9
Journal	Journal of Applied Physics
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.1667008
State	Published - 15 Apr 2004

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10.1063/1.1667008

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title = "Light-induced modification of a-SiOx II: Laser crystallization",

abstract = "The laser irradiation and crystallization behavior of amorphous silicon suboxides were analyzed. The surface melting threshold of the different samples was found to decrease linearly with oxygen from above 80 mJ/cm2 for a-Si to approximately 40 mJ/cm2. It was demonstrated that for silicon suboxides with oxygen concentrations below 40 atomic\% a phase separation in Si crystallites and in a surrounding SiOx matrix occurs upon laser irradiation. It was found that increasing oxygen content in the samples prevents an efficient formation of nc-Si or μc-si inclusions.",

author = "Andreas Janotta and Yavuz Dikce and Matthias Schmidt and Christopher Eisele and Martin Stutzmann and Martina Luysberg and Lothar Houben",

year = "2004",

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doi = "10.1063/1.1667008",

language = "English",

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TY - JOUR

T1 - Light-induced modification of a-SiOx II

T2 - Laser crystallization

AU - Janotta, Andreas

AU - Dikce, Yavuz

AU - Schmidt, Matthias

AU - Eisele, Christopher

AU - Stutzmann, Martin

AU - Luysberg, Martina

AU - Houben, Lothar

PY - 2004/4/15

Y1 - 2004/4/15

N2 - The laser irradiation and crystallization behavior of amorphous silicon suboxides were analyzed. The surface melting threshold of the different samples was found to decrease linearly with oxygen from above 80 mJ/cm2 for a-Si to approximately 40 mJ/cm2. It was demonstrated that for silicon suboxides with oxygen concentrations below 40 atomic% a phase separation in Si crystallites and in a surrounding SiOx matrix occurs upon laser irradiation. It was found that increasing oxygen content in the samples prevents an efficient formation of nc-Si or μc-si inclusions.

AB - The laser irradiation and crystallization behavior of amorphous silicon suboxides were analyzed. The surface melting threshold of the different samples was found to decrease linearly with oxygen from above 80 mJ/cm2 for a-Si to approximately 40 mJ/cm2. It was demonstrated that for silicon suboxides with oxygen concentrations below 40 atomic% a phase separation in Si crystallites and in a surrounding SiOx matrix occurs upon laser irradiation. It was found that increasing oxygen content in the samples prevents an efficient formation of nc-Si or μc-si inclusions.

UR - https://www.scopus.com/pages/publications/2342467516

U2 - 10.1063/1.1667008

DO - 10.1063/1.1667008

M3 - Article

AN - SCOPUS:2342467516

SN - 0021-8979

VL - 95

SP - 4060

EP - 4068

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Light-induced modification of a-SiO_x II: Laser crystallization

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