TY - JOUR
T1 - Light-induced metastable defects in hydrogenated amorphous silicon
AU - Stutzmann, Martin
AU - Jackson, Warren B.
AU - Tsai, Chuang Chuang
N1 - Funding Information:
*Work supported by the Solar Energy Research Institute.
PY - 1985/12/2
Y1 - 1985/12/2
N2 - Recent developments in the investigation of light-induced metastable defects in a-Si:H are discussed. A kinetic model that quantitatively describes the creation of metastable dangling bonds in UHV deposited a-Si:H can be extended for a qualitative understanding of defect creation in SiGe alloys, samples containing common impurities (C,N,O), and in compensated a-Si:H. It is also shown that mechanical stress enhances the defect creation efficiency. Detailed information about the energy barrier distribution of the metastable dangling bonds can be obtained by ESR annealing studies. Finally, new results showing a light-induced, reversible quenching of low energy tunneling modes are presented.
AB - Recent developments in the investigation of light-induced metastable defects in a-Si:H are discussed. A kinetic model that quantitatively describes the creation of metastable dangling bonds in UHV deposited a-Si:H can be extended for a qualitative understanding of defect creation in SiGe alloys, samples containing common impurities (C,N,O), and in compensated a-Si:H. It is also shown that mechanical stress enhances the defect creation efficiency. Detailed information about the energy barrier distribution of the metastable dangling bonds can be obtained by ESR annealing studies. Finally, new results showing a light-induced, reversible quenching of low energy tunneling modes are presented.
UR - http://www.scopus.com/inward/record.url?scp=0022227085&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(85)90676-3
DO - 10.1016/0022-3093(85)90676-3
M3 - Article
AN - SCOPUS:0022227085
SN - 0022-3093
VL - 77-78
SP - 363
EP - 372
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -