Light-induced metastable defects in hydrogenated amorphous silicon

Martin Stutzmann, Warren B. Jackson, Chuang Chuang Tsai

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Recent developments in the investigation of light-induced metastable defects in a-Si:H are discussed. A kinetic model that quantitatively describes the creation of metastable dangling bonds in UHV deposited a-Si:H can be extended for a qualitative understanding of defect creation in SiGe alloys, samples containing common impurities (C,N,O), and in compensated a-Si:H. It is also shown that mechanical stress enhances the defect creation efficiency. Detailed information about the energy barrier distribution of the metastable dangling bonds can be obtained by ESR annealing studies. Finally, new results showing a light-induced, reversible quenching of low energy tunneling modes are presented.

Original languageEnglish
Pages (from-to)363-372
Number of pages10
JournalJournal of Non-Crystalline Solids
Issue numberPART 1
StatePublished - 2 Dec 1985
Externally publishedYes


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