Light-induced metastable defects in amorphous silicon: The role of hydrogen

M. Stutzmann, W. B. Jackson, A. J. Smith, R. Thompson

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The role of hydrogen in the creation and annealing kinetics of the light-induced metastable defects in hydrogenated amorphous silicon is investigated using electron spin resonance. Deuterated and hydrogenated films exhibited the same defect creation rate and nearly identical distributions of annealing energies. Implications of these results for various microscopic models for the creation of metastable defects are discussed.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number1
DOIs
StatePublished - 1986
Externally publishedYes

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