Light emission from hot carriers in polar semiconductor devices

P. Lugli, A. Di Carlo, P. Vogl, G. Zandler

Research output: Contribution to journalConference articlepeer-review


We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a self-consistent Monte Carlo simulations. The carrier distribution functions obtained from the simulation are then incorporated into a psuedopotential algorithm that describes the direct optical transitions and calculates the corresponding spectra. We show that the light emission due to hot carriers is dominated by direct radiative interband transitions within the conduction and valence bands. Good agreement between theory and experiment is obtained for GaAs MESFET and GaAs/AlGaAs HBTs.

Original languageEnglish
Pages (from-to)196-207
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1993
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: 23 May 199328 May 1993


Dive into the research topics of 'Light emission from hot carriers in polar semiconductor devices'. Together they form a unique fingerprint.

Cite this