Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort; Y. Ren; A. Dijkstra; E. Fadaly; M. A. Verheijen; G. Reithmaier; D. Busse; S. Botti; M. A. Verheijen; J. Finley; E. P.A.M. Bakkers

doi:10.1364/IPRSN.2018.ITu4I.5

Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort
, Y. Ren
, A. Dijkstra
, E. Fadaly
, M. A. Verheijen
, G. Reithmaier
, D. Busse
, S. Botti
, M. A. Verheijen
, J. Finley
, E. P.A.M. Bakkers

Eindhoven University of Technology
Walter Schottky Institut
Friedrich Schiller University Jena

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Original language	English
Title of host publication	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580439
DOIs	https://doi.org/10.1364/IPRSN.2018.ITu4I.5
State	Published - 2018
Event	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2 Jul 2018 → 5 Jul 2018

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F101-IPRSN 2018
ISSN (Electronic)	2162-2701

Conference

Conference	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/Territory	Switzerland
City	Zurich
Period	2/07/18 → 5/07/18

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10.1364/IPRSN.2018.ITu4I.5

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Haverkort, J. E. M., Ren, Y., Dijkstra, A., Fadaly, E., Verheijen, M. A., Reithmaier, G., Busse, D., Botti, S., Verheijen, M. A., Finley, J., & Bakkers, E. P. A. M. (2018). Light emission from direct bandgap hexagonal SiGe. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Optics InfoBase Conference Papers; Vol. Part F101-IPRSN 2018). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/IPRSN.2018.ITu4I.5

@inproceedings{64db3d6a7f8c4a31bd4f6b1d5024e424,

title = "Light emission from direct bandgap hexagonal SiGe",

abstract = "Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70\%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.",

author = "Haverkort, \{J. E.M.\} and Y. Ren and A. Dijkstra and E. Fadaly and Verheijen, \{M. A.\} and G. Reithmaier and D. Busse and S. Botti and Verheijen, \{M. A.\} and J. Finley and Bakkers, \{E. P.A.M.\}",

note = "Publisher Copyright: {\textcopyright} 2018 The Author(s).; Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

year = "2018",

doi = "10.1364/IPRSN.2018.ITu4I.5",

language = "English",

isbn = "9781943580439",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018",

}

Haverkort, JEM, Ren, Y, Dijkstra, A, Fadaly, E, Verheijen, MA, Reithmaier, G, Busse, D, Botti, S, Verheijen, MA, Finley, J & Bakkers, EPAM 2018, Light emission from direct bandgap hexagonal SiGe. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Optics InfoBase Conference Papers, vol. Part F101-IPRSN 2018, Optica Publishing Group (formerly OSA), Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 2/07/18. https://doi.org/10.1364/IPRSN.2018.ITu4I.5

Light emission from direct bandgap hexagonal SiGe. / Haverkort, J. E.M.; Ren, Y.; Dijkstra, A. et al.
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Optica Publishing Group (formerly OSA), 2018. (Optics InfoBase Conference Papers; Vol. Part F101-IPRSN 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Light emission from direct bandgap hexagonal SiGe

AU - Haverkort, J. E.M.

AU - Ren, Y.

AU - Dijkstra, A.

AU - Fadaly, E.

AU - Verheijen, M. A.

AU - Reithmaier, G.

AU - Busse, D.

AU - Botti, S.

AU - Verheijen, M. A.

AU - Finley, J.

AU - Bakkers, E. P.A.M.

PY - 2018

Y1 - 2018

N2 - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

AB - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

UR - https://www.scopus.com/pages/publications/85051262545

U2 - 10.1364/IPRSN.2018.ITu4I.5

DO - 10.1364/IPRSN.2018.ITu4I.5

M3 - Conference contribution

AN - SCOPUS:85051262545

SN - 9781943580439

T3 - Optics InfoBase Conference Papers

BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

PB - Optica Publishing Group (formerly OSA)

T2 - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

Y2 - 2 July 2018 through 5 July 2018

ER -

Light emission from direct bandgap hexagonal SiGe

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